Invention Grant
- Patent Title: III-nitride devices and circuits
- Patent Title (中): III族氮化物器件和电路
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Application No.: US12368248Application Date: 2009-02-09
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Publication No.: US07884394B2Publication Date: 2011-02-08
- Inventor: Yifeng Wu , Rongming Chu
- Applicant: Yifeng Wu , Rongming Chu
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and can be used in combination with a low voltage enhancement-mode transistor to form an assembly that operates as a single high voltage enhancement mode transistor.
Public/Granted literature
- US20100201439A1 III-Nitride Devices and Circuits Public/Granted day:2010-08-12
Information query
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