Invention Grant
- Patent Title: Light emitting diode device and fabrication method thereof
- Patent Title (中): 发光二极管装置及其制造方法
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Application No.: US11874834Application Date: 2007-10-18
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Publication No.: US07884384B2Publication Date: 2011-02-08
- Inventor: Shu-Ru Chung , Kuan-Wen Wang , Chih-Cheng Chiang
- Applicant: Shu-Ru Chung , Kuan-Wen Wang , Chih-Cheng Chiang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW96123738A 20070629
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
The invention provides a light emitting diode device and a fabrication method thereof. The device comprises a pair of electrodes and one of which is electrically contacted with a holder, an LED chip fixed in the holder, a wrapping material formed in the holder and covering the LED chip, and a plurality of nanocrystals having a quantum dot state dispersed in the wrapping material. The nanocrystals satisfy the formula, Zn1-xCdxS and 0
Public/Granted literature
- US20090001395A1 LIGHT EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2009-01-01
Information query
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