Invention Grant
- Patent Title: Single-crystal semiconductor layer with heteroatomic macronetwork
- Patent Title (中): 具有杂原子大分子网络的单晶半导体层
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Application No.: US10583235Application Date: 2004-12-16
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Publication No.: US07884352B2Publication Date: 2011-02-08
- Inventor: Daniel Bensahel , Yves Campidelli , Oliver Kermarrec
- Applicant: Daniel Bensahel , Yves Campidelli , Oliver Kermarrec
- Applicant Address: FR Montrouge FR Crolles
- Assignee: STMicroelectronics S.A.,STMicroelectronics Crolles 2 SAS
- Current Assignee: STMicroelectronics S.A.,STMicroelectronics Crolles 2 SAS
- Current Assignee Address: FR Montrouge FR Crolles
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0351073 20031216
- International Application: PCT/FR2004/050713 WO 20041216
- International Announcement: WO2005/059978 WO 20050630
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
The invention relates to a single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
Public/Granted literature
- US20070248818A1 Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork Public/Granted day:2007-10-25
Information query
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