An installation for the plasma processing of a continuous material (1) includes an evacuatable discharge chamber (3a, 3b) and a device for setting a gas atmosphere in the discharge chamber (3a, 3b). The device for setting a gas atmosphere includes a prechamber system (10, 11, 12) and a postchamber system (2), with sluice openings between the chambers (2, 3a, 3b, 10, 11, 12). The continuous material (1) is guided with low friction through the prechamber system (10, 11, 12) and the postchamber system (2). The device for setting a gas atmosphere includes a recovery system wherein gas can be recirculated from a postchamber (2a . . . 2k) into a prechamber (10, 11, 12) and/or postchamber (2a . . . 2k) having a higher pressure level so that processing is effected in a gas-saving manner.