Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam

Invention Grant

US07883999B2 Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam 有权

Title translation: 使用气体团簇离子束增加衬底中材料浸渗深度的方法

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Patent Title: Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
Patent Title (中): 使用气体团簇离子束增加衬底中材料浸渗深度的方法
Application No.: US12020094

Application Date: 2008-01-25
Publication No.: US07883999B2

Publication Date: 2011-02-08
Inventor: Yan Shao , Thomas G. Tetreault , John J. Hautala
Applicant: Yan Shao , Thomas G. Tetreault , John J. Hautala
Applicant Address: US MA Billerica
Assignee: TEL Epion Inc.
Current Assignee: TEL Epion Inc.
Current Assignee Address: US MA Billerica
Agency: Wood, Herron & Evans, LLP
Main IPC: H01L21/265
IPC: H01L21/265

Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam

Abstract:

A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract(Chinese):

描述了在衬底表面下方注入材料的方法。该方法包括改变基板上的表面的表面状态以产生改性表面层，然后通过将基板暴露于包含该材料的气体簇离子束（GCIB）而将材料注入到基板中的改性表面中。

Public/Granted literature

US20090191696A1 METHOD FOR INCREASING THE PENETRATION DEPTH OF MATERIAL INFUSION IN A SUBSTRATE USING A GAS CLUSTER ION BEAM Public/Granted day:2009-07-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/26	....用波或粒子辐射轰击的
H01L21/263	.....带有高能辐射的（H01L21/261优先）
H01L21/265	......产生离子注入的