Invention Grant
US07883982B2 Monitor pattern of semiconductor device and method of manufacturing semiconductor device
有权
半导体器件的监视器模式及制造半导体器件的方法
- Patent Title: Monitor pattern of semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体器件的监视器模式及制造半导体器件的方法
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Application No.: US12379967Application Date: 2009-03-05
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Publication No.: US07883982B2Publication Date: 2011-02-08
- Inventor: Sachie Tone , Hiroyuki Uno , Naoki Tanahashi , Naoki Nishida
- Applicant: Sachie Tone , Hiroyuki Uno , Naoki Tanahashi , Naoki Nishida
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-162061 20020603
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A plurality of diffused resistors and a plurality of wirings (resistive elements) are alternately disposed along a virtual line, and those diffused resistors and wirings are connected in series by contact vias. In the same wiring layer as that of the wirings, a dummy pattern is formed so as to surround a formation region of the wirings and the diffused resistors. A space between the dummy pattern and the wirings is set in accordance with, for example, a minimum space between wirings in a chip formation portion.
Public/Granted literature
- US20090176346A1 Monitor pattern of semiconductor device and method of manufacturing semiconductor device Public/Granted day:2009-07-09
Information query
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