Method of forming semiconductor wells

Invention Grant

US07883973B2 Method of forming semiconductor wells 有权

Title translation: 形成半导体井的方法

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Patent Title: Method of forming semiconductor wells
Patent Title (中): 形成半导体井的方法
Application No.: US12335756

Application Date: 2008-12-16
Publication No.: US07883973B2

Publication Date: 2011-02-08
Inventor: Seetharaman Sridar , Marie Denison , Sameer Pendharkar
Applicant: Seetharaman Sridar , Marie Denison , Sameer Pendharkar
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
Main IPC: H01L21/336
IPC: H01L21/336

Abstract:

A method is provided of forming a semiconductor device. A substrate is provided having a dielectric layer formed thereover. The dielectric layer covers a protected region of the substrate, and has a first opening exposing a first unprotected region of the substrate. A first dopant is implanted into the first unprotected region through the first opening in the dielectric layer, and into the protected region through the dielectric layer.

Abstract(Chinese):

提供形成半导体器件的方法。提供具有形成在其上的电介质层的衬底。电介质层覆盖衬底的受保护区域，并且具有暴露衬底的第一未受保护区域的第一开口。第一掺杂剂通过电介质层中的第一开口注入第一未保护区域，并通过电介质层注入保护区域。

Public/Granted literature

US20100148125A1 METHOD OF FORMING SEMICONDUCTOR WELLS Public/Granted day:2010-06-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的