Invention Grant
US07883967B2 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
有权
非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
- Patent Title: Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
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Application No.: US11491054Application Date: 2006-07-24
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Publication No.: US07883967B2Publication Date: 2011-02-08
- Inventor: Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
- Applicant: Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-214613 20050725; JP2006-123914 20060427
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
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