Invention Grant
- Patent Title: Method for fabricating photodiodes
- Patent Title (中): 制造光电二极管的方法
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Application No.: US12402223Application Date: 2009-03-11
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Publication No.: US07883911B2Publication Date: 2011-02-08
- Inventor: Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
- Applicant: Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
- Applicant Address: JP
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP
- Agency: Haynes Soloway P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
Public/Granted literature
- US20090176327A1 PHOTODIODE AND METHOD FOR FABRICATING SAME Public/Granted day:2009-07-09
Information query
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