Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12277650Application Date: 2008-11-25
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Publication No.: US07881148B2Publication Date: 2011-02-01
- Inventor: Kyung-Hoon Kim , Sang-Sic Yoon , Hong-Bae Kim
- Applicant: Kyung-Hoon Kim , Sang-Sic Yoon , Hong-Bae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0053318 20080605
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/18 ; H03K3/017

Abstract:
A semiconductor memory device includes a clock supply portion for providing an external clock to the interior of the memory device, a clock transfer portion for transferring the clock from the clock supply portion to each of elements in the memory device and data output portions for outputting data in synchronism the clock from the clock transfer portion, wherein the clock from the clock supply portion to the clock transfer portion swings at a current mode logic (CML) level.
Public/Granted literature
- US20090303827A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-12-10
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