Invention Grant
US07880185B2 Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface 有权
具有具有横截面梯形形状和倾斜表面的基板的半导体发光器件

  • Patent Title: Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface
  • Patent Title (中): 具有具有横截面梯形形状和倾斜表面的基板的半导体发光器件
  • Application No.: US12362252
    Application Date: 2009-01-29
  • Publication No.: US07880185B2
    Publication Date: 2011-02-01
  • Inventor: Hideo Nagai
  • Applicant: Hideo Nagai
  • Applicant Address: JP Osaka
  • Assignee: Panasonic Corporation
  • Current Assignee: Panasonic Corporation
  • Current Assignee Address: JP Osaka
  • Priority: JP2003-428258 20031224
  • Main IPC: H01L29/201
  • IPC: H01L29/201 H01L33/00
Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface
Abstract:
In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30). The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14). Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4). A phosphor film (48) covers the LEDs (6). Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4). The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42). The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).
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