Invention Grant
- Patent Title: Nanostructure insulated junction field effect transistor
- Patent Title (中): 纳米结构绝缘结场效应晶体管
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Application No.: US12246270Application Date: 2008-10-06
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Publication No.: US07880163B2Publication Date: 2011-02-01
- Inventor: Bart Soree , Wim Magnus
- Applicant: Bart Soree , Wim Magnus
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A novel nanostructure device operating in Junction Field Effect Transistor (JFET) mode is provided that avoids the majority of the carriers that interact with the interface (e.g. surface roughness, high-k scattering).
Public/Granted literature
- US20100084632A1 NANOSTRUCTURE INSULATED JUNCTION FIELD EFFECT TRANSISTOR Public/Granted day:2010-04-08
Information query
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