Invention Grant
US07880158B2 Phase-change TaN resistor based triple-state/multi-state read only memory
有权
相变TaN电阻器基于三态/多态只读存储器
- Patent Title: Phase-change TaN resistor based triple-state/multi-state read only memory
- Patent Title (中): 相变TaN电阻器基于三态/多态只读存储器
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Application No.: US12109085Application Date: 2008-04-24
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Publication No.: US07880158B2Publication Date: 2011-02-01
- Inventor: John M. Aitken , Fen Chen , Kai D. Feng
- Applicant: John M. Aitken , Fen Chen , Kai D. Feng
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent David A. Cain, Esq.
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
Public/Granted literature
- US20080197337A1 PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY Public/Granted day:2008-08-21
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