Invention Grant
US07865660B2 Calibration of read/write memory access via advanced memory buffer
有权
通过高级内存缓冲区校准读/写存储器访问
- Patent Title: Calibration of read/write memory access via advanced memory buffer
- Patent Title (中): 通过高级内存缓冲区校准读/写存储器访问
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Application No.: US11735915Application Date: 2007-04-16
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Publication No.: US07865660B2Publication Date: 2011-01-04
- Inventor: Zhendong Guo , Larry Wu , Xiaorong Ye , Gang Shan
- Applicant: Zhendong Guo , Larry Wu , Xiaorong Ye , Gang Shan
- Applicant Address: KY George Town, Grand Cayman
- Assignee: Montage Technology Group Ltd.
- Current Assignee: Montage Technology Group Ltd.
- Current Assignee Address: KY George Town, Grand Cayman
- Agent Luy Mei
- Main IPC: G06F12/00
- IPC: G06F12/00 ; H03L7/06 ; H03L7/00 ; G11C7/10 ; G11C7/00 ; G01R13/00 ; G01R35/00 ; G01R25/00 ; G01D18/00

Abstract:
Methods and apparatuses to calibrate read/write memory accesses through data buses of different lengths via advanced memory buffers. One embodiment includes an advanced memory buffer (AMB) having: a plurality of ports to interface respectively with a plurality of data buses; a port to interface with a common clock bus for the plurality of data buses; and an adjustable circuit coupled with the plurality of ports to level delays on the plurality of data buses. In one embodiment, the data buses have different wire lengths between the dynamic random access memory (DRAM) memory chips and the advanced memory buffer (AMB).
Public/Granted literature
- US20080256282A1 Calibration of Read/Write Memory Access via Advanced Memory Buffer Public/Granted day:2008-10-16
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