Invention Grant
- Patent Title: On chip MOS transmit / receive switch
- Patent Title (中): 片上MOS发射/接收开关
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Application No.: US11762790Application Date: 2007-06-14
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Publication No.: US07865149B2Publication Date: 2011-01-04
- Inventor: Yiping Han , Arya Reza Behzad
- Applicant: Yiping Han , Arya Reza Behzad
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Garlick Harrison & Markison
- Agent Bruce E. Garlick
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H04B1/28 ; H04M1/00

Abstract:
On-chip MOS circuitry couples a communication path between an output stage amplifier and an output port and disables a circuit path between an input amplifier and the output port by creating a high impedance circuit during transmit operations. Alternatively, the circuitry opens the transmit circuit path with an isolated MOSFET and enables the second circuit path by creating an impedance matched circuit. The switch is formed within an isolated region to allow it to float with a signal to avoid breakdown. This floating MOS switch can be used for a variety of other applications in addition to its use as a transmit/receive switch even though formed on the same die as the communication circuitry.
Public/Granted literature
- US20080299913A1 ON CHIP MOS TRANSMIT / RECEIVE SWITCH Public/Granted day:2008-12-04
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