- Patent Title: Methods for determining resistance of phase change memory elements
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Application No.: US12165273Application Date: 2008-06-30
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Publication No.: US07864609B2Publication Date: 2011-01-04
- Inventor: John D. Porter , Jennifer Taylor
- Applicant: John D. Porter , Jennifer Taylor
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
Public/Granted literature
- US20090323408A1 METHODS FOR DETERMINING RESISTANCE OF PHASE CHANGE MEMORY ELEMENTS Public/Granted day:2009-12-31
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