Invention Grant
- Patent Title: Non-volatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US12277698Application Date: 2008-11-25
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Publication No.: US07864586B2Publication Date: 2011-01-04
- Inventor: Naoya Tokiwa
- Applicant: Naoya Tokiwa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-320259 20071212
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C5/14
Abstract:
A non-volatile semiconductor memory device includes: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a first register group configured to store control data used for controlling memory operations; an adjusting data storage area defined in the memory cell array so as to store adjusting data used for adjusting the control data; and a second register group configured to store the adjusting data read from the adjusting data storage area.
Public/Granted literature
- US20090154237A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-06-18
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