Invention Grant
- Patent Title: Recovery method of NAND flash memory device
- Patent Title (中): NAND闪存器件的恢复方法
-
Application No.: US11297610Application Date: 2005-12-07
-
Publication No.: US07864581B2Publication Date: 2011-01-04
- Inventor: Ju Yeab Lee
- Applicant: Ju Yeab Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0030023 20050411
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A NAND flash memory device is recovered by applying a predetermined bias to a drain or a source. A negative bias is applied to a cell gate so that electrons are injected into a floating gate of a cell. This narrows the distribution of an erase threshold voltage and minimizes interference from states of peripheral cells.
Public/Granted literature
- US20060227611A1 Recovery method of NAND flash memory device Public/Granted day:2006-10-12
Information query
