Invention Grant
- Patent Title: Flash memory storage apparatus, flash memory controller, and switching method thereof
- Patent Title (中): 闪存存储装置,闪存控制器及其切换方法
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Application No.: US12047119Application Date: 2008-03-12
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Publication No.: US07864572B2Publication Date: 2011-01-04
- Inventor: Chih-Kang Yeh , Chih-Jen Lee
- Applicant: Chih-Kang Yeh , Chih-Jen Lee
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: J.C. Patents
- Priority: TW97100552A 20080107
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A flash memory storage apparatus including a multi level cell (MLC) NAND flash memory, a flash memory controller, and a host transmission bus is provided. The MLC NAND flash memory includes a plurality of blocks for storing data, wherein each of the blocks has an upper page and a lower page, and the writing speed of the lower page is faster than that of the upper page. The flash memory controller is electrically connected to the MLC NAND flash memory and is used for executing storage mode switching steps. The host transmission bus is electrically connected to the flash memory controller and is used for communicating with a host. The flash memory storage apparatus provided by the present invention can provide multiple storage modes in order to store different data.
Public/Granted literature
- US20090175075A1 FLASH MEMORY STORAGE APPARATUS, FLASH MEMORY CONTROLLER, AND SWITCHING METHOD THEREOF Public/Granted day:2009-07-09
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