A method for programming a phase change memory device that avoids RESET overwrite. The method partially comprised of applying a reset write current pulse through the phase change memory element such that the reset write current pulse produces a voltage drop across the phase change memory element less than a reset threshold voltage and greater than a set threshold voltage. The reset write current pulse writing a RESET state to the phase change memory cell. The method additionally comprised of applying a set write current pulse through the phase change memory element such that the set write current pulse produces a voltage drop across the phase change memory element that is equal to or greater than the reset threshold voltage. The set write current pulse writing a SET state to the phase change memory cell.