Invention Grant
- Patent Title: Magnetic random access memory
- Patent Title (中): 磁性随机存取存储器
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Application No.: US11863997Application Date: 2007-09-28
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Publication No.: US07864563B2Publication Date: 2011-01-04
- Inventor: Yuui Shimizu , Tsuneo Inaba
- Applicant: Yuui Shimizu , Tsuneo Inaba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-101390 20050331
- Main IPC: G11C11/02
- IPC: G11C11/02 ; G11C11/14 ; G11C11/15 ; G11C7/14

Abstract:
A magnetic random access memory according to an example of the invention comprises a first reference bit line shared by first reference cells, a second reference bit line shared by second reference cells, a first driver-sinker to feed a first writing current, a second driver-sinker to feed a second writing current, and a control circuit which checks data stored in the first and second reference cells line by line, and executes writing simultaneously to all of the first and second reference cells by a uniaxial writing when the data is broken.
Public/Granted literature
- US20080253173A1 MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2008-10-16
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