Invention Grant
- Patent Title: Magnetic domain information storage device and method of manufacturing the same
- Patent Title (中): 磁畴信息存储装置及其制造方法
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Application No.: US11987925Application Date: 2007-12-06
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Publication No.: US07864556B2Publication Date: 2011-01-04
- Inventor: Chee-kheng Lim , Sung-hoon Choa
- Applicant: Chee-kheng Lim , Sung-hoon Choa
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0123368 20061206
- Main IPC: G11C19/00
- IPC: G11C19/00

Abstract:
Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.
Public/Granted literature
- US20080137406A1 Magnetic domain information storage device and method of manufacturing the same Public/Granted day:2008-06-12
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