Invention Grant
- Patent Title: Apparatus and methods for a high-voltage latch
- Patent Title (中): 高电压锁存装置及方法
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Application No.: US12538766Application Date: 2009-08-10
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Publication No.: US07863959B2Publication Date: 2011-01-04
- Inventor: Johnny Chan , Jeffrey Ming-Hung Tsai , Tin-Wai Wong
- Applicant: Johnny Chan , Jeffrey Ming-Hung Tsai , Tin-Wai Wong
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H03K3/356
- IPC: H03K3/356

Abstract:
Some embodiments include a device having storage node and a latch circuit coupled to the storage node to latch data provided to the storage node during one of a first mode and a second mode of the device. The latch circuit includes a first transistor, a second transistor, and a third transistor coupled between a first voltage node and a second voltage node. The third transistor is configured to selectively turn on and off in the first and second modes. Other embodiments are described.
Public/Granted literature
- US20090295447A1 APPARATUS AND METHODS FOR A HIGH-VOLTAGE LATCH Public/Granted day:2009-12-03
Information query
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