A push-pull voltage regulator configured to selectively provide power to used portions of a memory array is presented. The push-pull voltage regulator includes a voltage-up regulator, which provides a reference voltage to an SRAM array, and a voltage-down regulator, which controls removal of excess charge from the SRAM array. The voltage-down regulator consists of a plurality of amplifier stages with a plurality of inputs, a plurality of inverters, a gain amplifier, a biasing transistor, and a NMOS drainage transistor. The gate terminal of the NMOS drainage transistor is coupled to an output of the voltage-down regulator. A first output terminal of the NMOS drainage transistor coupled to an output node of the push-pull voltage regulator and a second output terminal of the NMOS drainage transistor coupled to ground. When activated, the NMOS drainage transistor transfers excess charge from the SRAM array to ground.