Invention Grant
- Patent Title: Semiconductor chip and manufacturing method thereof
- Patent Title (中): 半导体芯片及其制造方法
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Application No.: US12078893Application Date: 2008-04-08
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Publication No.: US07863741B2Publication Date: 2011-01-04
- Inventor: Hiroshi Ozaki , Satoru Wakiyama
- Applicant: Hiroshi Ozaki , Satoru Wakiyama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2007-122156 20070507
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode. The pad electrode is covered with a nickel layer. The bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer, and the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.
Public/Granted literature
- US20080277784A1 Semiconductor chip and manufacturing method thereof Public/Granted day:2008-11-13
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