Invention Grant
- Patent Title: Semiconductor wafer and method for cutting the same
- Patent Title (中): 半导体晶片及其切割方法
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Application No.: US12058543Application Date: 2008-03-28
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Publication No.: US07863711B2Publication Date: 2011-01-04
- Inventor: Ki Young Um
- Applicant: Ki Young Um
- Applicant Address: KR Seoul
- Assignee: LG Electronics Inc.
- Current Assignee: LG Electronics Inc.
- Current Assignee Address: KR Seoul
- Agency: KED & Associates, LLP
- Priority: KR10-2007-0034642 20070409
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor wafer and a method for cutting the same are provided, which enable separation of the semiconductor wafer by natural cleavage planes. The cutting method includes preparing a substrate including a semiconductor layer with at least one projection, formed on a predetermined area thereof; forming a post on an upper surface of the semiconductor layer at one or both sides of the projection to be placed on a cleaving line for cutting of the semiconductor layer; and cutting the substrate including the semiconductor layer along the cleaving line by performing a scribing process in a direction from the substrate and a breaking process in a direction from the semiconductor layer.
Public/Granted literature
- US20080258269A1 SEMICONDUCTOR WAFER AND METHOD FOR CUTTING THE SAME Public/Granted day:2008-10-23
Information query
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