Invention Grant
US07863688B2 Layout patterns for deep well region to facilitate routing body-bias voltage
失效
用于深井区域的布局图案，以便于路由体偏置电压
- Patent Title: Layout patterns for deep well region to facilitate routing body-bias voltage
- Patent Title (中): 用于深井区域的布局图案，以便于路由体偏置电压
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Application No.: US12628011Application Date: 2009-11-30
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Publication No.: US07863688B2Publication Date: 2011-01-04
- Inventor: Mike Pelham , James B. Burr
- Applicant: Mike Pelham , James B. Burr
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/8238
Abstract:
Layout patterns for the deep well region to facilitate routing the body-bias voltage in a semiconductor device are provided and described. The layout patterns include a diagonal sub-surface mesh structure, an axial sub-surface mesh structure, a diagonal sub-surface strip structure, and an axial sub-surface strip structure. A particular layout pattern is selected for an area of the semiconductor device according to several factors.
Public/Granted literature
- US20100072575A1 LAYOUT PATTERNS FOR DEEP WELL REGION TO FACILITATE ROUTING BODY-BIAS VOLTAGE Public/Granted day:2010-03-25
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