Invention Grant
- Patent Title: CMOS image sensor and method for fabrication thereof
- Patent Title (中): CMOS图像传感器及其制造方法
-
Application No.: US11452296Application Date: 2006-06-14
-
Publication No.: US07863658B2Publication Date: 2011-01-04
- Inventor: Won-Joon Ho , Kyung-Lak Lee
- Applicant: Won-Joon Ho , Kyung-Lak Lee
- Agency: McAndrews, Held & Malloy, Ltd.
- Priority: KR10-2005-0052352 20050617
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
Public/Granted literature
- US20060284273A1 CMOS image sensor and method for fabrication thereof Public/Granted day:2006-12-21
Information query
IPC分类: