A memory cell device having a vertical channel and a double gate structure is provided. More specifically, a memory cell device having a vertical channel and a double gate structure is characterized by having a pillar active region with a predetermined height, which is including a first semiconductor layer forming a first source/drain region, a second semiconductor layer being placed under the first semiconductor layer with a predetermined distance and forming a second source/drain region, and a third semiconductor layer forming a body region and a channel region between the first semiconductor layer and the second semiconductor layer, and therefore, there is no need for unnecessary contacts when it is used as a unit cell for any type of memory array, not to speak of NOR type flash memory array. And the present invention makes to program/erase more effectively and increase the read speed and the amount of sensing current.