Invention Grant
- Patent Title: Semiconductor light emitting devices with applied wavelength conversion materials
- Patent Title (中): 具有应用波长转换材料的半导体发光器件
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Application No.: US11835044Application Date: 2007-08-07
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Publication No.: US07863635B2Publication Date: 2011-01-04
- Inventor: Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
- Applicant: Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
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Information query
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