Invention Grant
- Patent Title: Integrated circuits utilizing amorphous oxides
- Patent Title (中): 采用无定形氧化物的集成电路
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Application No.: US11269646Application Date: 2005-11-09
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Publication No.: US07863611B2Publication Date: 2011-01-04
- Inventor: Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
- Applicant: Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- Current Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-326685 20041110
- Main IPC: H01L31/20
- IPC: H01L31/20
Abstract:
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
Public/Granted literature
- US20060113565A1 Electric elements and circuits utilizing amorphous oxides Public/Granted day:2006-06-01
Information query
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