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US07863605B2 Photoelectric conversion element including a mixed layer of a P-type organic semiconductor and a fullerene, method for producing the same, and solid-state imaging device using the same 有权
包括P型有机半导体和富勒烯的混合层的光电转换元件及其制造方法以及使用其的固态成像器件

  • Patent Title: Photoelectric conversion element including a mixed layer of a P-type organic semiconductor and a fullerene, method for producing the same, and solid-state imaging device using the same
  • Patent Title (中): 包括P型有机半导体和富勒烯的混合层的光电转换元件及其制造方法以及使用其的固态成像器件
  • Application No.: US12195213
    Application Date: 2008-08-20
  • Publication No.: US07863605B2
    Publication Date: 2011-01-04
  • Inventor: Masayuki Hayashi
  • Applicant: Masayuki Hayashi
  • Applicant Address: JP Tokyo
  • Assignee: Fujifilm Corporation
  • Current Assignee: Fujifilm Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2007-215715 20070822
  • Main IPC: H01L51/00
  • IPC: H01L51/00
Photoelectric conversion element including a mixed layer of a P-type organic semiconductor and a fullerene, method for producing the same, and solid-state imaging device using the same
Abstract:
A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1.
Abstract(Chinese):

提供光电转换元件并包括光电转换部分。 光电转换部包括：一对电极; 以及所述一对电极之间的光电转换层，并且所述光电转换层的至少一部分包括p型有机半导体和富勒烯的混合层，以及所述富勒烯与p型有机半导体的混合比例 厚度比小于1：1。

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