Invention Grant
- Patent Title: Photovoltaic device
- Patent Title (中): 光伏装置
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Application No.: US10793844Application Date: 2004-03-08
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Publication No.: US07863518B2Publication Date: 2011-01-04
- Inventor: Akira Terakawa , Toshio Asaumi
- Applicant: Akira Terakawa , Toshio Asaumi
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-078115 20030320; JP2004-005071 20040113
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/04 ; H01L31/075 ; H01L31/20

Abstract:
A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.
Public/Granted literature
- US20040182433A1 Photovoltaic device Public/Granted day:2004-09-23
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