Invention Grant
- Patent Title: Solar cell with epitaxially grown quantum dot material
- Patent Title (中): 具有外延生长量子点材料的太阳能电池
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Application No.: US11038230Application Date: 2005-01-21
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Publication No.: US07863516B2Publication Date: 2011-01-04
- Inventor: Simon Fafard
- Applicant: Simon Fafard
- Applicant Address: CA Ottawa, Ontario
- Assignee: Cyrium Technologies Incorporated
- Current Assignee: Cyrium Technologies Incorporated
- Current Assignee Address: CA Ottawa, Ontario
- Agency: Borden Ladner Gervais LLP
- Agent Louis B. Allard
- Main IPC: H02N6/00
- IPC: H02N6/00

Abstract:
A monolithic semiconductor photovoltaic solar cell comprising a plurality of subcells disposed in series on an electrically conductive substrate. At least one subcell of the plurality of subcells includes an epitaxially grown self-assembled quantum dot material. The subcells are electrically connected via tunnel junctions. Each of the subcells has an effective bandgap energy. The subcells are disposed in order of increasing effective bangap energy, with the subcell having the lowest effective bandgap energy being closest to the substrate. In certain cases, each subcell is designed to absorb a substantially same amount of solar photons.
Public/Granted literature
- US20050155641A1 Solar cell with epitaxially grown quantum dot material Public/Granted day:2005-07-21
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