Invention Grant
- Patent Title: Methods of forming particle-containing materials
- Patent Title (中): 形成含颗粒材料的方法
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Application No.: US12608596Application Date: 2009-10-29
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Publication No.: US07863199B2Publication Date: 2011-01-04
- Inventor: Garo J. Derderian , Gurtej S. Sandhu
- Applicant: Garo J. Derderian , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: B05D1/12
- IPC: B05D1/12
Abstract:
The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.
Public/Granted literature
- US20100047945A1 Methods Of Forming Particle-Containing Materials Public/Granted day:2010-02-25
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