Invention Grant
- Patent Title: Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure
- Patent Title (中): 具有应变层的半导体器件结构和制造半导体器件结构的方法
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Application No.: US12072445Application Date: 2008-02-26
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Publication No.: US07863152B2Publication Date: 2011-01-04
- Inventor: Seung-hwan Lee , Heon-jong Shin , Shigenobu Maeda , Sung-rey Wi , Quan WangXiao , Hyun-min Choi
- Applicant: Seung-hwan Lee , Heon-jong Shin , Shigenobu Maeda , Sung-rey Wi , Quan WangXiao , Hyun-min Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2007-0019880 20070227
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
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