Invention Grant
US07863150B2 Method to generate airgaps with a template first scheme and a self aligned blockout mask
有权
使用模板第一方案和自对准遮挡掩码生成气隙的方法
- Patent Title: Method to generate airgaps with a template first scheme and a self aligned blockout mask
- Patent Title (中): 使用模板第一方案和自对准遮挡掩码生成气隙的方法
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Application No.: US11518773Application Date: 2006-09-11
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Publication No.: US07863150B2Publication Date: 2011-01-04
- Inventor: Matthew Earl Colburn , Daniel C. Edelstein , Satya Venkata Nitta , Sampath Purushothaman , Shom Ponth
- Applicant: Matthew Earl Colburn , Daniel C. Edelstein , Satya Venkata Nitta , Sampath Purushothaman , Shom Ponth
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Nugent & Smith, LLP
- Agent Theresa O'Rourke Nugent
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A structure and method to produce an airgap on a substrate having a dielectric layer with a pattern transferred onto the dielectric layer and a self aligned block out mask transferred on the dielectric layer around the pattern.
Public/Granted literature
- US20080122106A1 Method to generate airgaps with a template first scheme and a self aligned blockout mask Public/Granted day:2008-05-29
Information query
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