Invention Grant
- Patent Title: Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide
- Patent Title (中): 铟锡氧化物靶，其制造方法，氧化铟锡透明导电膜，以及氧化铟锡透明导电膜的制造方法
-
Application No.: US12243379Application Date: 2008-10-01
-
Publication No.: US07862748B2Publication Date: 2011-01-04
- Inventor: Bon Kyung Koo , Han Ho Yoon , Ju Ok Park , Hyung Ryul Park , Hyun Su Kim , Sung Ryong Choi , Joong Ryeol Choi , Pung Keun Song , Joon-Hong Park
- Applicant: Bon Kyung Koo , Han Ho Yoon , Ju Ok Park , Hyung Ryul Park , Hyun Su Kim , Sung Ryong Choi , Joong Ryeol Choi , Pung Keun Song , Joon-Hong Park
- Applicant Address: KR Gumi-Si, Gyeongsangbuk-do
- Assignee: Samsung Corning Precision Materials Co., Ltd.
- Current Assignee: Samsung Corning Precision Materials Co., Ltd.
- Current Assignee Address: KR Gumi-Si, Gyeongsangbuk-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2007-0131485 20071214
- Main IPC: H01B1/08
- IPC: H01B1/08
Abstract:
Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.
Public/Granted literature
Information query
