Invention Grant
- Patent Title: Self heating monitor for SiGe and SOI CMOS devices
- Patent Title (中): SiGe和SOI CMOS器件的自加热监控器
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Application No.: US11769064Application Date: 2007-06-27
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Publication No.: US07862233B2Publication Date: 2011-01-04
- Inventor: Paul A. Hyde , Edward J. Nowak
- Applicant: Paul A. Hyde , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Robert Mlotkowski Safran & Cole, P.C.
- Agent Michael LeStrange
- Main IPC: G01K7/01
- IPC: G01K7/01 ; H01L31/00
Abstract:
A structure, apparatus and method for deterring the temperature of an active region in semiconductor, particularly a FET is provided. A pair FETs are arranged on a silicon island a prescribed distance from one another where the silicon island is surrounded by a thermal insulator. One FET is heated by a current driven therethrough. The other FET functions as a temperature sensor by having a change in an electrical characteristic versus temperature monitored. By arranging multiple pairs of FETs separated by different known distances, the temperature of the active region of one of the FETs may be determined during operation at various driving currents.
Public/Granted literature
- US20070262359A1 SELF HEATING MONITOR FOR SiGe AND SOI CMOS DEVICES Public/Granted day:2007-11-15
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