Invention Grant
US07849432B2 Shallow trench isolation dummy pattern and layout method using the same
有权
浅沟隔离虚拟图案和布局方法使用相同
- Patent Title: Shallow trench isolation dummy pattern and layout method using the same
- Patent Title (中): 浅沟隔离虚拟图案和布局方法使用相同
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Application No.: US12116284Application Date: 2008-05-07
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Publication No.: US07849432B2Publication Date: 2010-12-07
- Inventor: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- Applicant: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Priority: TW92132806A 20031121
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
Public/Granted literature
- US20080209381A1 SHALLOW TRENCH ISOLATION DUMMY PATTERN AND LAYOUT METHOD USING THE SAME Public/Granted day:2008-08-28
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