Invention Grant
- Patent Title: CMOS RF switch for high-performance radio systems
- Patent Title (中): CMOS射频开关用于高性能无线电系统
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Application No.: US11799981Application Date: 2007-05-03
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Publication No.: US07848712B2Publication Date: 2010-12-07
- Inventor: Chang-Tsung Fu , Stewart S. Taylor
- Applicant: Chang-Tsung Fu , Stewart S. Taylor
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Scott M. Lane
- Main IPC: H04B1/46
- IPC: H04B1/46

Abstract:
A wireless device includes high-performance CMOS RF switches that include serially connected transistors coupled between an input terminal and an output terminal, with an inductor coupled from the input to the output that resonates out the capacitance of the transistors to improve isolation. The transistors have a floating/bootstrapped body with remote body contacts.
Public/Granted literature
- US20080272824A1 CMOS RF switch for high-performance radio systems Public/Granted day:2008-11-06
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