Invention Grant
US07848148B2 One-transistor cell semiconductor on insulator random access memory
有权
单晶硅单元半导体绝缘体随机存取存储器
- Patent Title: One-transistor cell semiconductor on insulator random access memory
- Patent Title (中): 单晶硅单元半导体绝缘体随机存取存储器
-
Application No.: US12099910Application Date: 2008-04-09
-
Publication No.: US07848148B2Publication Date: 2010-12-07
- Inventor: Hang-Ting Lue
- Applicant: Hang-Ting Lue
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/402
Abstract:
Silicon-oxide-nitride-oxide-silicon SONOS-type devices (or BE-SONOS) fabricated in Silicon-On-Insulator (SOI) technology for nonvolatile implementations. An ultra-thin tunnel oxide can be implemented providing for very fast program/erase operations, supported by refresh operations as used in classical DRAM technology. The memory arrays are arranged in divided bit line architectures. A gate injection, DRAM cell is described with no tunnel oxide.
Public/Granted literature
- US20090103367A1 ONE-TRANSISTOR CELL SEMICONDUCTOR ON INSULATOR RANDOM ACCESS MEMORY Public/Granted day:2009-04-23
Information query
