Invention Grant
US07848059B2 Magnetoresistive effect device and magnetic random access memory using the same
有权
磁阻效应器件和磁性随机存取存储器使用相同
- Patent Title: Magnetoresistive effect device and magnetic random access memory using the same
- Patent Title (中): 磁阻效应器件和磁性随机存取存储器使用相同
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Application No.: US11858386Application Date: 2007-09-20
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Publication No.: US07848059B2Publication Date: 2010-12-07
- Inventor: Masatoshi Yoshikawa , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Masatoshi Yoshikawa , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-269517 20060929
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0
Public/Granted literature
- US20080231998A1 MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME Public/Granted day:2008-09-25
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