Invention Grant
- Patent Title: Low noise amplifier for ultra wide band
- Patent Title (中): 低噪声放大器用于超宽带
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Application No.: US12352380Application Date: 2009-01-12
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Publication No.: US07847636B2Publication Date: 2010-12-07
- Inventor: Choong-yul Cha , Hoon-tae Kim , Sang-gug Lee
- Applicant: Choong-yul Cha , Hoon-tae Kim , Sang-gug Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR2005-9135 20050201
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
A low noise amplifier (LNA) for ultra wide band receives and amplifies identical RF signals in different frequency bands, and includes more than one pair of narrow band LNAs coupled in parallel, and a load circuit which increases load impedance of the entire circuit of the narrow band LNAs. The LNA can not only amplify the RF signal in the UWB but also obtain the low noise and the high gain that are features of the conventional narrow band LNA.
Public/Granted literature
- US20090140815A1 LOW NOISE AMPLIFIER FOR ULTRA WIDE BAND Public/Granted day:2009-06-04
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