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US07847604B2 Driving circuit for power semiconductor element including controlling circuit that provides control when detected voltage reaches predetermined voltage 有权
包括控制电路的功率半导体元件的驱动电路，当检测电压达到预定电压时，提供控制

Driving circuit for power semiconductor element including controlling circuit that provides control when detected voltage reaches predetermined voltage
Abstract:
Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.
Abstract(Chinese):

提供一种驱动电路，其抑制在切换功率半导体元件时的浪涌电压并降低开关损耗。 诸如IGBT和要配对的另一元件（20）的元件（10）连接，元件（10）由驱动器（22）驱动，栅极电压由控制电路（24）控制。 当功率半导体元件关断时，比较器26检测元件20的电压（Vak）为规定电压，控制电路24将栅极电阻从低电阻切换到高电阻，抑制 浪涌电压，开关损耗减小。 当功率半导体元件导通时，检测到启动电压（Vak），并且控制电路（24）在规定时间之后将栅极电阻从高电阻切换到低电阻以抑制浪涌电压，并且切换 损失减少。

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