Invention Grant
- Patent Title: Electron emitter apparatus, a fabrication process for the same and a device utilising the same
- Patent Title (中): 电子发射器装置,其制造方法和利用其的装置
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Application No.: US12037468Application Date: 2008-02-26
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Publication No.: US07847475B2Publication Date: 2010-12-07
- Inventor: Takehisa Ishida , Wei Beng Ng
- Applicant: Takehisa Ishida , Wei Beng Ng
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: SG200703694-0 20070525
- Main IPC: H01J63/04
- IPC: H01J63/04

Abstract:
A field effect electron emitting apparatus is prepared by depositing a plurality of nano-wires 216 onto a substrate 200 having a cathode layer 214. The deposition occurs by suspending the nano-wires 216 in a plating solution, and plating the substrate with a metal layer 202, thereby entrapping the nano-wires. The nano-wires 216 are composed of an electrically-conductive magnetic material, and the deposition process is carried out in the presence of a magnetic field perpendicular to the substrate 200 so that the nano-wires 216 are aligned by the field.
Public/Granted literature
- US20080291366A1 ELECTRON EMITTER APPARATUS, A FABRICATION PROCESS FOR THE SAME AND A DEVICE UTILISING THE SAME Public/Granted day:2008-11-27
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