Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12339613Application Date: 2008-12-19
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Publication No.: US07847441B2Publication Date: 2010-12-07
- Inventor: Masahiro Tatsumi , Takeshi Ishibashi
- Applicant: Masahiro Tatsumi , Takeshi Ishibashi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2007-329329 20071220
- Main IPC: H01H9/54
- IPC: H01H9/54

Abstract:
A semiconductor integrated circuit includes a plurality of circuit blocks; a plurality of power switches configured to supply power or cut power supply to the corresponding circuit blocks on a circuit-block-by-circuit-block basis in accordance with logic states of first control signals; a power switch controller configured to select, upon receipt of a second control signal, which power switches to control from among the plurality of power switches, and output third control signals instructing the selected power switches to supply power or cut power supply; and a first protection circuit provided between the power switches and the power switch controller, the first protection circuit being configured to output the first control signals, which are obtained by converting the logic states of the third control signals, to the selected power switches.
Public/Granted literature
- US20090160266A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-06-25
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