Invention Grant
US07847407B2 Semiconductor device with interface peeling preventing rewiring layer
有权
具有界面剥离防护重新布线层的半导体器件
- Patent Title: Semiconductor device with interface peeling preventing rewiring layer
- Patent Title (中): 具有界面剥离防护重新布线层的半导体器件
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Application No.: US11798991Application Date: 2007-05-18
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Publication No.: US07847407B2Publication Date: 2010-12-07
- Inventor: Kiyonori Watanabe
- Applicant: Kiyonori Watanabe
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2006-192881 20060713
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device which is capable of preventing interface peeling and a crack from occurring in the vicinity of the edge part of a rewiring layer is provided. The semiconductor device comprises a semiconductor substrate; a first interlayer insulation film (a first insulation film) which is formed on the semiconductor substrate, having a first aperture; a first rewiring layer which is formed, ranging from a part of the top surface of the first interlayer insulation film to the inside of the first aperture, and which uppermost surface has a size smaller than the size of the region surrounded by the outer periphery of the surface contacting with the first interlayer insulation film; and a second interlayer insulation film (a second insulation film) which is formed on the first rewiring layer and on the first interlayer insulation film.
Public/Granted literature
- US20080023836A1 Semiconductor device Public/Granted day:2008-01-31
Information query
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