Invention Grant
- Patent Title: Semiconductor devices having a gate electrode and methods of fabricating the same
- Patent Title (中): 具有栅电极的半导体器件及其制造方法
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Application No.: US11985511Application Date: 2007-11-15
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Publication No.: US07847367B2Publication Date: 2010-12-07
- Inventor: Dae-Ik Kim
- Applicant: Dae-Ik Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2006-0112966 20061115
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L21/283

Abstract:
An integrated circuit device includes an integrated circuit substrate and a first gate pattern on the substrate. A non-conductive barrier layer pattern is on the first gate pattern. The barrier layer pattern has openings at selected locations therein extending to the first gate pattern. A second gate pattern is on the barrier layer pattern and extends into the opening in the barrier layer pattern to electrically connect the second gate pattern to the first gate pattern.
Public/Granted literature
- US20080111208A1 Semiconductor devices having a gate electrode and methods of fabricating the same Public/Granted day:2008-05-15
Information query
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