Invention Grant
US07847367B2 Semiconductor devices having a gate electrode and methods of fabricating the same 失效
具有栅电极的半导体器件及其制造方法

Semiconductor devices having a gate electrode and methods of fabricating the same
Abstract:
An integrated circuit device includes an integrated circuit substrate and a first gate pattern on the substrate. A non-conductive barrier layer pattern is on the first gate pattern. The barrier layer pattern has openings at selected locations therein extending to the first gate pattern. A second gate pattern is on the barrier layer pattern and extends into the opening in the barrier layer pattern to electrically connect the second gate pattern to the first gate pattern.
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