Invention Grant
- Patent Title: Well for CMOS imager
- Patent Title (中): 对于CMOS成像器来说
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Application No.: US12402226Application Date: 2009-03-11
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Publication No.: US07847366B2Publication Date: 2010-12-07
- Inventor: Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
- Applicant: Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
Public/Granted literature
- US20090173975A1 WELL FOR CMOS IMAGER AND METHOD OF FORMATION Public/Granted day:2009-07-09
Information query
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